casa / productos / Productos semiconductores discretos / Transistores - Bipolar (BJT) - Arreglos, Pre-polar / EMG8T2R
Número de pieza del fabricante | EMG8T2R |
---|---|
Número de parte futuro | FT-EMG8T2R |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | - |
EMG8T2R Estado (ciclo de vida) | En stock |
Estado de la pieza | Active |
Tipo de transistor | 2 NPN - Pre-Biased (Dual) |
Corriente - Colector (Ic) (Max) | 100mA |
Voltaje - Desglose del emisor del colector (máx.) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Base del emisor (R2) | 47 kOhms |
Ganancia de corriente DC (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Saturación Vce (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Corriente - Corte del colector (Máx.) | 500nA |
Frecuencia - Transición | 250MHz |
Potencia - max | 150mW |
Tipo de montaje | Surface Mount |
Paquete / Caja | 6-SMD (5 Leads), Flat Lead |
Paquete del dispositivo del proveedor | EMT5 |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMG8T2R Peso | Contáctenos |
Número de pieza de repuesto | EMG8T2R-FT |
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