casa / productos / Productos semiconductores discretos / Transistores - Bipolar (BJT) - Arreglos, Pre-polar / EMD6T2R
Número de pieza del fabricante | EMD6T2R |
---|---|
Número de parte futuro | FT-EMD6T2R |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | - |
EMD6T2R Estado (ciclo de vida) | En stock |
Estado de la pieza | Active |
Tipo de transistor | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Corriente - Colector (Ic) (Max) | 100mA |
Voltaje - Desglose del emisor del colector (máx.) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Base del emisor (R2) | - |
Ganancia de corriente DC (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Saturación Vce (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Corriente - Corte del colector (Máx.) | - |
Frecuencia - Transición | 250MHz |
Potencia - max | 150mW |
Tipo de montaje | Surface Mount |
Paquete / Caja | SOT-563, SOT-666 |
Paquete del dispositivo del proveedor | EMT6 |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMD6T2R Peso | Contáctenos |
Número de pieza de repuesto | EMD6T2R-FT |
RN1902T5LFT
Toshiba Semiconductor and Storage
RN1905(T5L,F,T)
Toshiba Semiconductor and Storage
RN1905,LF
Toshiba Semiconductor and Storage
RN1906(T5L,F,T)
Toshiba Semiconductor and Storage
RN1906,LF
Toshiba Semiconductor and Storage
RN1907,LF
Toshiba Semiconductor and Storage
RN1908(T5L,F,T)
Toshiba Semiconductor and Storage
RN1909(T5L,F,T)
Toshiba Semiconductor and Storage
RN1911(T5L,F,T)
Toshiba Semiconductor and Storage
RN2901(T5L,F,T)
Toshiba Semiconductor and Storage
A3P400-FGG484
Microsemi Corporation
A3P250L-FG256
Microsemi Corporation
A54SX32A-PQG208A
Microsemi Corporation
ICE40HX4K-CB132
Lattice Semiconductor Corporation
5SGXMA7N1F40C2LN
Intel
XC4020XL-09BG256C
Xilinx Inc.
XC6VLX240T-2FFG784C
Xilinx Inc.
XC7K410T-1FBG900I
Xilinx Inc.
XC7K325T-1FFG676CES9937
Xilinx Inc.
APA075-TQ100I
Microsemi Corporation