casa / productos / Productos semiconductores discretos / Transistores - FETs, MOSFETs - Arreglos / APTM100DDA35T3G
Número de pieza del fabricante | APTM100DDA35T3G |
---|---|
Número de parte futuro | FT-APTM100DDA35T3G |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | - |
APTM100DDA35T3G Estado (ciclo de vida) | En stock |
Estado de la pieza | Obsolete |
Tipo FET | 2 N-Channel (Dual) |
Característica FET | Standard |
Drenaje a la fuente de voltaje (Vdss) | 1000V (1kV) |
Corriente - Drenaje continuo (Id) a 25 ° C | 22A |
Rds On (Max) @ Id, Vgs | 420 mOhm @ 11A, 10V |
Vgs (th) (Max) @ Id | 5V @ 2.5mA |
Carga de la puerta (Qg) (Max) @ Vgs | 186nC @ 10V |
Capacitancia de entrada (Ciss) (Máx.) @ Vds | 5200pF @ 25V |
Potencia - max | 390W |
Temperatura de funcionamiento | -40°C ~ 150°C (TJ) |
Tipo de montaje | Chassis Mount |
Paquete / Caja | SP3 |
Paquete del dispositivo del proveedor | SP3 |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
APTM100DDA35T3G Peso | Contáctenos |
Número de pieza de repuesto | APTM100DDA35T3G-FT |
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