casa / productos / Productos semiconductores discretos / Transistores - FETs, MOSFETs - Arreglos / TPD3215M
Número de pieza del fabricante | TPD3215M |
---|---|
Número de parte futuro | FT-TPD3215M |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | - |
TPD3215M Estado (ciclo de vida) | En stock |
Estado de la pieza | Obsolete |
Tipo FET | 2 N-Channel (Half Bridge) |
Característica FET | GaNFET (Gallium Nitride) |
Drenaje a la fuente de voltaje (Vdss) | 600V |
Corriente - Drenaje continuo (Id) a 25 ° C | 70A (Tc) |
Rds On (Max) @ Id, Vgs | 34 mOhm @ 30A, 8V |
Vgs (th) (Max) @ Id | - |
Carga de la puerta (Qg) (Max) @ Vgs | 28nC @ 8V |
Capacitancia de entrada (Ciss) (Máx.) @ Vds | 2260pF @ 100V |
Potencia - max | 470W |
Temperatura de funcionamiento | -40°C ~ 150°C (TJ) |
Tipo de montaje | Through Hole |
Paquete / Caja | Module |
Paquete del dispositivo del proveedor | Module |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
TPD3215M Peso | Contáctenos |
Número de pieza de repuesto | TPD3215M-FT |
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