casa / productos / Productos semiconductores discretos / Transistores - FETs, MOSFETs - Arreglos / SQJ244EP-T1_GE3
Número de pieza del fabricante | SQJ244EP-T1_GE3 |
---|---|
Número de parte futuro | FT-SQJ244EP-T1_GE3 |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | Automotive, AEC-Q101, TrenchFET® |
SQJ244EP-T1_GE3 Estado (ciclo de vida) | En stock |
Estado de la pieza | Active |
Tipo FET | 2 N-Channel (Dual) Asymmetrical |
Característica FET | Standard |
Drenaje a la fuente de voltaje (Vdss) | 40V |
Corriente - Drenaje continuo (Id) a 25 ° C | 20A (Tc), 60A (Tc) |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 4A, 10V, 4.5 mOhm @ 10A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Carga de la puerta (Qg) (Max) @ Vgs | 20nC @ 10V, 45nC @ 10V |
Capacitancia de entrada (Ciss) (Máx.) @ Vds | 1200pF @ 25V, 2800pF @ 25V |
Potencia - max | 27W (Tc), 48W (Tc) |
Temperatura de funcionamiento | -55°C ~ 175°C (TJ) |
Tipo de montaje | Surface Mount |
Paquete / Caja | PowerPAK® SO-8 Dual |
Paquete del dispositivo del proveedor | PowerPAK® SO-8 Dual Asymmetric |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
SQJ244EP-T1_GE3 Peso | Contáctenos |
Número de pieza de repuesto | SQJ244EP-T1_GE3-FT |
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