casa / productos / Productos semiconductores discretos / Transistores - FETs, MOSFETs - Arreglos / SQJ204EP-T1_GE3
Número de pieza del fabricante | SQJ204EP-T1_GE3 |
---|---|
Número de parte futuro | FT-SQJ204EP-T1_GE3 |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | Automotive, AEC-Q101, TrenchFET® |
SQJ204EP-T1_GE3 Estado (ciclo de vida) | En stock |
Estado de la pieza | Active |
Tipo FET | 2 N-Channel (Dual) Asymmetrical |
Característica FET | Standard |
Drenaje a la fuente de voltaje (Vdss) | 12V |
Corriente - Drenaje continuo (Id) a 25 ° C | 20A (Tc), 60A (Tc) |
Rds On (Max) @ Id, Vgs | 8.3 mOhm @ 4A, 10V, 3 mOhm @ 10A, 10V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA |
Carga de la puerta (Qg) (Max) @ Vgs | 20nC @ 10V, 50nC @ 10V |
Capacitancia de entrada (Ciss) (Máx.) @ Vds | 1400pF @ 6V, 3700pF @ 6V |
Potencia - max | 27W (Tc), 48W (Tc) |
Temperatura de funcionamiento | -55°C ~ 175°C (TJ) |
Tipo de montaje | Surface Mount |
Paquete / Caja | PowerPAK® SO-8 Dual |
Paquete del dispositivo del proveedor | PowerPAK® SO-8 Dual Asymmetric |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
SQJ204EP-T1_GE3 Peso | Contáctenos |
Número de pieza de repuesto | SQJ204EP-T1_GE3-FT |
ALD110914SAL
Advanced Linear Devices Inc.
ALD110900ASAL
Advanced Linear Devices Inc.
ALD110902SAL
Advanced Linear Devices Inc.
ALD110904SAL
Advanced Linear Devices Inc.
ALD1101BSAL
Advanced Linear Devices Inc.
ALD1102ASAL
Advanced Linear Devices Inc.
ALD1102BSAL
Advanced Linear Devices Inc.
ALD1102SAL
Advanced Linear Devices Inc.
ALD110900SAL
Advanced Linear Devices Inc.
ALD110908SAL
Advanced Linear Devices Inc.
AGL400V5-FGG256I
Microsemi Corporation
M1A3P1000-1FG256I
Microsemi Corporation
LFE2M100SE-5FN1152C
Lattice Semiconductor Corporation
EP3C55U484I7N
Intel
EPF10K30EFC256-2N
Intel
5SGXMA7K2F40I3N
Intel
XC7VX690T-2FFG1926C
Xilinx Inc.
LFEC20E-3FN484I
Lattice Semiconductor Corporation
LFE3-95E-6FN484I
Lattice Semiconductor Corporation
EP4SGX180FF35I4
Intel