casa / productos / Productos semiconductores discretos / Transistores - FETs, MOSFETs - Arreglos / SIZ320DT-T1-GE3
Número de pieza del fabricante | SIZ320DT-T1-GE3 |
---|---|
Número de parte futuro | FT-SIZ320DT-T1-GE3 |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | PowerPAIR®, TrenchFET® |
SIZ320DT-T1-GE3 Estado (ciclo de vida) | En stock |
Estado de la pieza | Active |
Tipo FET | 2 N-Channel (Dual) |
Característica FET | Standard |
Drenaje a la fuente de voltaje (Vdss) | 25V |
Corriente - Drenaje continuo (Id) a 25 ° C | 30A (Tc), 40A (Tc) |
Rds On (Max) @ Id, Vgs | 8.3 mOhm @ 8A, 10V, 4.24 mOhm @ 10A, 10V |
Vgs (th) (Max) @ Id | 2.4V @ 250µA |
Carga de la puerta (Qg) (Max) @ Vgs | 8.9nC @ 4.5V, 11.9nC @ 4.5V |
Capacitancia de entrada (Ciss) (Máx.) @ Vds | 660pF @ 12.5V, 1370pF @ 12.5V |
Potencia - max | 16.7W, 31W |
Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
Tipo de montaje | Surface Mount |
Paquete / Caja | 8-PowerWDFN |
Paquete del dispositivo del proveedor | 8-Power33 (3x3) |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIZ320DT-T1-GE3 Peso | Contáctenos |
Número de pieza de repuesto | SIZ320DT-T1-GE3-FT |
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