casa / productos / Productos semiconductores discretos / Transistores - FETs, MOSFETs - Arreglos / SI7940DP-T1-GE3
Número de pieza del fabricante | SI7940DP-T1-GE3 |
---|---|
Número de parte futuro | FT-SI7940DP-T1-GE3 |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | TrenchFET® |
SI7940DP-T1-GE3 Estado (ciclo de vida) | En stock |
Estado de la pieza | Obsolete |
Tipo FET | 2 N-Channel (Dual) |
Característica FET | Logic Level Gate |
Drenaje a la fuente de voltaje (Vdss) | 12V |
Corriente - Drenaje continuo (Id) a 25 ° C | 7.6A |
Rds On (Max) @ Id, Vgs | 17 mOhm @ 11.8A, 4.5V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA |
Carga de la puerta (Qg) (Max) @ Vgs | 17nC @ 4.5V |
Capacitancia de entrada (Ciss) (Máx.) @ Vds | - |
Potencia - max | 1.4W |
Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
Tipo de montaje | Surface Mount |
Paquete / Caja | PowerPAK® SO-8 Dual |
Paquete del dispositivo del proveedor | PowerPAK® SO-8 Dual |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI7940DP-T1-GE3 Peso | Contáctenos |
Número de pieza de repuesto | SI7940DP-T1-GE3-FT |
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