casa / productos / Productos semiconductores discretos / Transistores - Bipolar (BJT) - Arreglos, Pre-polar / RN2903,LF(CT
Número de pieza del fabricante | RN2903,LF(CT |
---|---|
Número de parte futuro | FT-RN2903,LF(CT |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | - |
RN2903,LF(CT Estado (ciclo de vida) | En stock |
Estado de la pieza | Active |
Tipo de transistor | 2 PNP - Pre-Biased (Dual) |
Corriente - Colector (Ic) (Max) | 100mA |
Voltaje - Desglose del emisor del colector (máx.) | 50V |
Resistor - Base (R1) | 22 kOhms |
Resistor - Base del emisor (R2) | 22 kOhms |
Ganancia de corriente DC (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
Saturación Vce (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Corriente - Corte del colector (Máx.) | 500nA |
Frecuencia - Transición | 200MHz |
Potencia - max | 200mW |
Tipo de montaje | Surface Mount |
Paquete / Caja | 6-TSSOP, SC-88, SOT-363 |
Paquete del dispositivo del proveedor | US6 |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2903,LF(CT Peso | Contáctenos |
Número de pieza de repuesto | RN2903,LF(CT-FT |
RN4905FE,LF(CT
Toshiba Semiconductor and Storage
RN4906FE,LF(CT
Toshiba Semiconductor and Storage
RN4907FE,LF(CT
Toshiba Semiconductor and Storage
RN1905FE,LF(CT
Toshiba Semiconductor and Storage
RN1906FE,LF(CT
Toshiba Semiconductor and Storage
RN1907FE,LF(CT
Toshiba Semiconductor and Storage
RN1910FE,LF(CT
Toshiba Semiconductor and Storage
RN2902FE,LF(CT
Toshiba Semiconductor and Storage
RN2905FE,LF(CT
Toshiba Semiconductor and Storage
RN4904FE,LF(CT
Toshiba Semiconductor and Storage
XC6SLX75-2FGG484C
Xilinx Inc.
APA1000-FG896A
Microsemi Corporation
EPF6016ATC100-2N
Intel
LFXP6C-5Q208C
Lattice Semiconductor Corporation
LFXP20E-4F256C
Lattice Semiconductor Corporation
5CEFA2U19A7N
Intel
10AX066K2F40E1SG
Intel
10AX115N1F40E1SG
Intel
10CL120ZF780I8G
Intel
EPF10K30AQC208-2
Intel