casa / productos / Productos semiconductores discretos / Transistores - Bipolar (BJT) - Solos, Pre-polariza / RN2108CT(TPL3)
Número de pieza del fabricante | RN2108CT(TPL3) |
---|---|
Número de parte futuro | FT-RN2108CT(TPL3) |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | - |
RN2108CT(TPL3) Estado (ciclo de vida) | En stock |
Estado de la pieza | Obsolete |
Tipo de transistor | PNP - Pre-Biased |
Corriente - Colector (Ic) (Max) | 50mA |
Voltaje - Desglose del emisor del colector (máx.) | 20V |
Resistor - Base (R1) | 22 kOhms |
Resistor - Base del emisor (R2) | 47 kOhms |
Ganancia de corriente DC (hFE) (Min) @ Ic, Vce | 120 @ 10mA, 5V |
Saturación Vce (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Corriente - Corte del colector (Máx.) | 500nA |
Frecuencia - Transición | - |
Potencia - max | 50mW |
Tipo de montaje | Surface Mount |
Paquete / Caja | SC-101, SOT-883 |
Paquete del dispositivo del proveedor | CST3 |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2108CT(TPL3) Peso | Contáctenos |
Número de pieza de repuesto | RN2108CT(TPL3)-FT |
RN2107,LF(CT
Toshiba Semiconductor and Storage
RN2110,LF(CT
Toshiba Semiconductor and Storage
RN2111,LF(CT
Toshiba Semiconductor and Storage
RN2114(TE85L,F)
Toshiba Semiconductor and Storage
RN2115,LF(CT
Toshiba Semiconductor and Storage
RN2116,LF(CT
Toshiba Semiconductor and Storage
RN1102T5LFT
Toshiba Semiconductor and Storage
RN1104T5LFT
Toshiba Semiconductor and Storage
RN1108(T5L,F,T)
Toshiba Semiconductor and Storage
RN1109(T5L,F,T)
Toshiba Semiconductor and Storage
XC3S50-5VQ100C
Xilinx Inc.
EP3C25F256C8
Intel
XC5VLX50T-2FFG665C
Xilinx Inc.
XC7K325T-1FF900C
Xilinx Inc.
M1AGL600V2-FG144
Microsemi Corporation
M1AGL600V5-FGG144
Microsemi Corporation
LFE2-20E-5F484I
Lattice Semiconductor Corporation
LCMXO640E-5M100C
Lattice Semiconductor Corporation
10AX115R4F40I3SG
Intel
EP3C40F324C7
Intel