casa / productos / Productos semiconductores discretos / Transistores - Bipolar (BJT) - Arreglos, Pre-polar / RN1905,LF(CT
Número de pieza del fabricante | RN1905,LF(CT |
---|---|
Número de parte futuro | FT-RN1905,LF(CT |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | - |
RN1905,LF(CT Estado (ciclo de vida) | En stock |
Estado de la pieza | Active |
Tipo de transistor | 2 NPN - Pre-Biased (Dual) |
Corriente - Colector (Ic) (Max) | 100mA |
Voltaje - Desglose del emisor del colector (máx.) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Base del emisor (R2) | 47 kOhms |
Ganancia de corriente DC (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Saturación Vce (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Corriente - Corte del colector (Máx.) | 500nA |
Frecuencia - Transición | 250MHz |
Potencia - max | 200mW |
Tipo de montaje | Surface Mount |
Paquete / Caja | 6-TSSOP, SC-88, SOT-363 |
Paquete del dispositivo del proveedor | US6 |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN1905,LF(CT Peso | Contáctenos |
Número de pieza de repuesto | RN1905,LF(CT-FT |
RN2908FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2909FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2910FE,LF(CT
Toshiba Semiconductor and Storage
RN4902FE,LF(CT
Toshiba Semiconductor and Storage
RN4905FE,LF(CT
Toshiba Semiconductor and Storage
RN4906FE,LF(CT
Toshiba Semiconductor and Storage
RN4907FE,LF(CT
Toshiba Semiconductor and Storage
RN1905FE,LF(CT
Toshiba Semiconductor and Storage
RN1906FE,LF(CT
Toshiba Semiconductor and Storage
RN1907FE,LF(CT
Toshiba Semiconductor and Storage
EP20K30ETC144-3N
Intel
XC3S1500-5FG320C
Xilinx Inc.
XC4VFX100-11FFG1517I
Xilinx Inc.
A42MX36-3PQ208
Microsemi Corporation
10M40DCF256I7G
Intel
EP4CE22F17C9LN
Intel
5SGSMD5H3F35I3N
Intel
XC7VX415T-2FFG1927C
Xilinx Inc.
LFX200EB-03F256I
Lattice Semiconductor Corporation
EP2AGX125EF35C6N
Intel