casa / productos / Productos semiconductores discretos / Transistores - FETs, MOSFETs - Arreglos / NVMD6P02R2G
Número de pieza del fabricante | NVMD6P02R2G |
---|---|
Número de parte futuro | FT-NVMD6P02R2G |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | - |
NVMD6P02R2G Estado (ciclo de vida) | En stock |
Estado de la pieza | Active |
Tipo FET | 2 P-Channel (Dual) |
Característica FET | Logic Level Gate |
Drenaje a la fuente de voltaje (Vdss) | 20V |
Corriente - Drenaje continuo (Id) a 25 ° C | 4.8A |
Rds On (Max) @ Id, Vgs | 33 mOhm @ 6.2A, 4.5V |
Vgs (th) (Max) @ Id | 1.2V @ 250µA |
Carga de la puerta (Qg) (Max) @ Vgs | 35nC @ 4.5V |
Capacitancia de entrada (Ciss) (Máx.) @ Vds | 1700pF @ 16V |
Potencia - max | 750mW |
Temperatura de funcionamiento | - |
Tipo de montaje | Surface Mount |
Paquete / Caja | 8-SOIC (0.154", 3.90mm Width) |
Paquete del dispositivo del proveedor | 8-SOIC |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
NVMD6P02R2G Peso | Contáctenos |
Número de pieza de repuesto | NVMD6P02R2G-FT |
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