casa / productos / Productos semiconductores discretos / Transistores - FETs, MOSFETs - Arreglos / NTMD6N03R2G
Número de pieza del fabricante | NTMD6N03R2G |
---|---|
Número de parte futuro | FT-NTMD6N03R2G |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | - |
NTMD6N03R2G Estado (ciclo de vida) | En stock |
Estado de la pieza | Active |
Tipo FET | 2 N-Channel (Dual) |
Característica FET | Logic Level Gate |
Drenaje a la fuente de voltaje (Vdss) | 30V |
Corriente - Drenaje continuo (Id) a 25 ° C | 6A |
Rds On (Max) @ Id, Vgs | 32 mOhm @ 6A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Carga de la puerta (Qg) (Max) @ Vgs | 30nC @ 10V |
Capacitancia de entrada (Ciss) (Máx.) @ Vds | 950pF @ 24V |
Potencia - max | 1.29W |
Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
Tipo de montaje | Surface Mount |
Paquete / Caja | 8-SOIC (0.154", 3.90mm Width) |
Paquete del dispositivo del proveedor | 8-SOIC |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
NTMD6N03R2G Peso | Contáctenos |
Número de pieza de repuesto | NTMD6N03R2G-FT |
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