casa / productos / Productos semiconductores discretos / Transistores - Bipolar (BJT) - Arreglos, Pre-polar / NSVIMD10AMT1G
Número de pieza del fabricante | NSVIMD10AMT1G |
---|---|
Número de parte futuro | FT-NSVIMD10AMT1G |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | Automotive, AEC-Q101 |
NSVIMD10AMT1G Estado (ciclo de vida) | En stock |
Estado de la pieza | Active |
Tipo de transistor | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Corriente - Colector (Ic) (Max) | 500mA |
Voltaje - Desglose del emisor del colector (máx.) | 50V |
Resistor - Base (R1) | 13 kOhms, 130 Ohms |
Resistor - Base del emisor (R2) | 10 kOhms |
Ganancia de corriente DC (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V / 68 @ 100mA, 5V |
Saturación Vce (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Corriente - Corte del colector (Máx.) | 500nA |
Frecuencia - Transición | - |
Potencia - max | 285mW |
Tipo de montaje | Surface Mount |
Paquete / Caja | SOT-23-6 Thin, TSOT-23-6 |
Paquete del dispositivo del proveedor | SC-74R |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSVIMD10AMT1G Peso | Contáctenos |
Número de pieza de repuesto | NSVIMD10AMT1G-FT |
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