casa / productos / Productos semiconductores discretos / Transistores - Bipolar (BJT) - Arreglos, Pre-polar / NSBA115EDXV6T1G
Número de pieza del fabricante | NSBA115EDXV6T1G |
---|---|
Número de parte futuro | FT-NSBA115EDXV6T1G |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | - |
NSBA115EDXV6T1G Estado (ciclo de vida) | En stock |
Estado de la pieza | Active |
Tipo de transistor | 2 PNP - Pre-Biased (Dual) |
Corriente - Colector (Ic) (Max) | 100mA |
Voltaje - Desglose del emisor del colector (máx.) | 50V |
Resistor - Base (R1) | 100 kOhms |
Resistor - Base del emisor (R2) | 100 kOhms |
Ganancia de corriente DC (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Saturación Vce (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Corriente - Corte del colector (Máx.) | 500nA |
Frecuencia - Transición | - |
Potencia - max | 500mW |
Tipo de montaje | Surface Mount |
Paquete / Caja | SOT-563, SOT-666 |
Paquete del dispositivo del proveedor | SOT-563 |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSBA115EDXV6T1G Peso | Contáctenos |
Número de pieza de repuesto | NSBA115EDXV6T1G-FT |
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