casa / productos / Productos semiconductores discretos / Transistores - Bipolar (BJT) - Arreglos, Pre-polar / MUN5215DW1T1G
Número de pieza del fabricante | MUN5215DW1T1G |
---|---|
Número de parte futuro | FT-MUN5215DW1T1G |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | - |
MUN5215DW1T1G Estado (ciclo de vida) | En stock |
Estado de la pieza | Active |
Tipo de transistor | 2 NPN - Pre-Biased (Dual) |
Corriente - Colector (Ic) (Max) | 100mA |
Voltaje - Desglose del emisor del colector (máx.) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Base del emisor (R2) | - |
Ganancia de corriente DC (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Saturación Vce (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Corriente - Corte del colector (Máx.) | 500nA |
Frecuencia - Transición | - |
Potencia - max | 250mW |
Tipo de montaje | Surface Mount |
Paquete / Caja | 6-TSSOP, SC-88, SOT-363 |
Paquete del dispositivo del proveedor | SC-88/SC70-6/SOT-363 |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
MUN5215DW1T1G Peso | Contáctenos |
Número de pieza de repuesto | MUN5215DW1T1G-FT |
NSBC114EPDXV6T1
ON Semiconductor
NSBC114TDXV6T1
ON Semiconductor
NSBC114TDXV6T5
ON Semiconductor
NSBC114TPDXV6T1
ON Semiconductor
NSBC114YDXV6T1
ON Semiconductor
NSBC114YPDXV6T1
ON Semiconductor
NSBC123EDXV6T1
ON Semiconductor
NSBC123EPDXV6T1
ON Semiconductor
NSBC123EPDXV6T1G
ON Semiconductor
NSBC123JDXV6T1
ON Semiconductor
LFE2-6E-7T144C
Lattice Semiconductor Corporation
XC4013E-2PQ208I
Xilinx Inc.
A3PN010-QNG48I
Microsemi Corporation
LFE2M100SE-5FN1152I
Lattice Semiconductor Corporation
ICE40LM4K-SWG25TR50
Lattice Semiconductor Corporation
A42MX09-3VQ100
Microsemi Corporation
10M16DCF484I6G
Intel
EP2C5F256I8N
Intel
EP3SL150F1152I4
Intel
XA7A50T-1CSG324I
Xilinx Inc.