casa / productos / Circuitos integrados (ICs) / Memoria / MT47H64M8SH-25E AAT:H
Número de pieza del fabricante | MT47H64M8SH-25E AAT:H |
---|---|
Número de parte futuro | FT-MT47H64M8SH-25E AAT:H |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | - |
MT47H64M8SH-25E AAT:H Estado (ciclo de vida) | En stock |
Estado de la pieza | Last Time Buy |
Tipo de memoria | Volatile |
Formato de memoria | DRAM |
Tecnología | SDRAM - DDR2 |
Tamaño de la memoria | 512Mb (64M x 8) |
Frecuencia de reloj | 400MHz |
Tiempo de ciclo de escritura - Palabra, Página | 15ns |
Tiempo de acceso | 400ps |
interfaz de memoria | Parallel |
Suministro de voltaje | 1.7V ~ 1.9V |
Temperatura de funcionamiento | -40°C ~ 105°C (TA) |
Tipo de montaje | Surface Mount |
Paquete / Caja | 60-TFBGA |
Paquete del dispositivo del proveedor | 60-FBGA (10x18) |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
MT47H64M8SH-25E AAT:H Peso | Contáctenos |
Número de pieza de repuesto | MT47H64M8SH-25E AAT:H-FT |
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