casa / productos / Circuitos integrados (ICs) / Memoria / MT47H64M8CF-25E:G

| Número de pieza del fabricante | MT47H64M8CF-25E:G |
|---|---|
| Número de parte futuro | FT-MT47H64M8CF-25E:G |
| SPQ / MOQ | Contáctenos |
| Material de empaque | Reel/Tray/Tube/Others |
| serie | - |
| MT47H64M8CF-25E:G Estado (ciclo de vida) | En stock |
| Estado de la pieza | Obsolete |
| Tipo de memoria | Volatile |
| Formato de memoria | DRAM |
| Tecnología | SDRAM - DDR2 |
| Tamaño de la memoria | 512Mb (64M x 8) |
| Frecuencia de reloj | 400MHz |
| Tiempo de ciclo de escritura - Palabra, Página | 15ns |
| Tiempo de acceso | 400ps |
| interfaz de memoria | Parallel |
| Suministro de voltaje | 1.7V ~ 1.9V |
| Temperatura de funcionamiento | 0°C ~ 85°C (TC) |
| Tipo de montaje | Surface Mount |
| Paquete / Caja | 60-TFBGA |
| Paquete del dispositivo del proveedor | 60-FBGA (8x10) |
| País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
| MT47H64M8CF-25E:G Peso | Contáctenos |
| Número de pieza de repuesto | MT47H64M8CF-25E:G-FT |

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