casa / productos / Circuitos integrados (ICs) / Memoria / MB85R4M2TFN-G-ASE1
Número de pieza del fabricante | MB85R4M2TFN-G-ASE1 |
---|---|
Número de parte futuro | FT-MB85R4M2TFN-G-ASE1 |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | - |
MB85R4M2TFN-G-ASE1 Estado (ciclo de vida) | En stock |
Estado de la pieza | Active |
Tipo de memoria | Non-Volatile |
Formato de memoria | FRAM |
Tecnología | FRAM (Ferroelectric RAM) |
Tamaño de la memoria | 4Mb (256K x 16) |
Frecuencia de reloj | - |
Tiempo de ciclo de escritura - Palabra, Página | 150ns |
Tiempo de acceso | 150ns |
interfaz de memoria | Parallel |
Suministro de voltaje | 1.8V ~ 3.6V |
Temperatura de funcionamiento | -40°C ~ 85°C (TA) |
Tipo de montaje | Surface Mount |
Paquete / Caja | 44-TSOP (0.400", 10.16mm Width) |
Paquete del dispositivo del proveedor | 44-TSOP |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
MB85R4M2TFN-G-ASE1 Peso | Contáctenos |
Número de pieza de repuesto | MB85R4M2TFN-G-ASE1-FT |
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