casa / productos / Circuitos integrados (ICs) / Memoria / IS61DDB21M36-250M3
Número de pieza del fabricante | IS61DDB21M36-250M3 |
---|---|
Número de parte futuro | FT-IS61DDB21M36-250M3 |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | - |
IS61DDB21M36-250M3 Estado (ciclo de vida) | En stock |
Estado de la pieza | Discontinued at Future Semiconductor |
Tipo de memoria | Volatile |
Formato de memoria | SRAM |
Tecnología | SRAM - Synchronous, DDR II |
Tamaño de la memoria | 36Mb (1M x 36) |
Frecuencia de reloj | 250MHz |
Tiempo de ciclo de escritura - Palabra, Página | - |
Tiempo de acceso | - |
interfaz de memoria | Parallel |
Suministro de voltaje | 1.71V ~ 1.89V |
Temperatura de funcionamiento | 0°C ~ 70°C (TA) |
Tipo de montaje | Surface Mount |
Paquete / Caja | 165-LBGA |
Paquete del dispositivo del proveedor | 165-LFBGA (13x15) |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
IS61DDB21M36-250M3 Peso | Contáctenos |
Número de pieza de repuesto | IS61DDB21M36-250M3-FT |
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