casa / productos / Productos semiconductores discretos / Transistores - FETs, MOSFETs - Single / IRFI530GPBF
Número de pieza del fabricante | IRFI530GPBF |
---|---|
Número de parte futuro | FT-IRFI530GPBF |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | - |
IRFI530GPBF Estado (ciclo de vida) | En stock |
Estado de la pieza | Active |
Tipo FET | N-Channel |
Tecnología | MOSFET (Metal Oxide) |
Drenaje a la fuente de voltaje (Vdss) | 100V |
Corriente - Drenaje continuo (Id) a 25 ° C | 9.7A (Tc) |
Voltaje de impulsión (Rds máximo activado, Rds mínimo activado) | 10V |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 5.8A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Carga de la puerta (Qg) (Max) @ Vgs | 33nC @ 10V |
Vgs (Max) | ±20V |
Capacitancia de entrada (Ciss) (Máx.) @ Vds | 670pF @ 25V |
Característica FET | - |
Disipación de potencia (max) | 42W (Tc) |
Temperatura de funcionamiento | -55°C ~ 175°C (TJ) |
Tipo de montaje | Through Hole |
Paquete del dispositivo del proveedor | TO-220-3 |
Paquete / Caja | TO-220-3 Full Pack, Isolated Tab |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRFI530GPBF Peso | Contáctenos |
Número de pieza de repuesto | IRFI530GPBF-FT |
SSR1N60BTM_F080
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