casa / productos / Circuitos integrados (ICs) / Memoria / GD25S512MDYIGR
Número de pieza del fabricante | GD25S512MDYIGR |
---|---|
Número de parte futuro | FT-GD25S512MDYIGR |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | - |
GD25S512MDYIGR Estado (ciclo de vida) | En stock |
Estado de la pieza | Active |
Tipo de memoria | Non-Volatile |
Formato de memoria | FLASH |
Tecnología | FLASH - NOR |
Tamaño de la memoria | 512Mb (64M x 8) |
Frecuencia de reloj | 104MHz |
Tiempo de ciclo de escritura - Palabra, Página | 50µs, 2.4ms |
Tiempo de acceso | - |
interfaz de memoria | SPI - Quad I/O |
Suministro de voltaje | 2.7V ~ 3.6V |
Temperatura de funcionamiento | -40°C ~ 85°C (TA) |
Tipo de montaje | Surface Mount |
Paquete / Caja | 8-WDFN Exposed Pad |
Paquete del dispositivo del proveedor | 8-WSON (6x8) |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
GD25S512MDYIGR Peso | Contáctenos |
Número de pieza de repuesto | GD25S512MDYIGR-FT |
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