casa / productos / Productos semiconductores discretos / Transistores - Bipolar (BJT) - Arreglos, Pre-polar / EMD30T2R
Número de pieza del fabricante | EMD30T2R |
---|---|
Número de parte futuro | FT-EMD30T2R |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | - |
EMD30T2R Estado (ciclo de vida) | En stock |
Estado de la pieza | Not For New Designs |
Tipo de transistor | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Corriente - Colector (Ic) (Max) | 100mA, 200mA |
Voltaje - Desglose del emisor del colector (máx.) | 50V, 30V |
Resistor - Base (R1) | 10 kOhms, 1 kOhms |
Resistor - Base del emisor (R2) | 10 kOhms |
Ganancia de corriente DC (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V / 140 @ 100mA, 2V |
Saturación Vce (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA |
Corriente - Corte del colector (Máx.) | 500nA |
Frecuencia - Transición | 250MHz, 260MHz |
Potencia - max | 150mW |
Tipo de montaje | Surface Mount |
Paquete / Caja | SOT-563, SOT-666 |
Paquete del dispositivo del proveedor | EMT6 |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMD30T2R Peso | Contáctenos |
Número de pieza de repuesto | EMD30T2R-FT |
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