casa / productos / Productos semiconductores discretos / Transistores - Bipolar (BJT) - Arreglos, Pre-polar / EMD30T2R
Número de pieza del fabricante | EMD30T2R |
---|---|
Número de parte futuro | FT-EMD30T2R |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | - |
EMD30T2R Estado (ciclo de vida) | En stock |
Estado de la pieza | Not For New Designs |
Tipo de transistor | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Corriente - Colector (Ic) (Max) | 100mA, 200mA |
Voltaje - Desglose del emisor del colector (máx.) | 50V, 30V |
Resistor - Base (R1) | 10 kOhms, 1 kOhms |
Resistor - Base del emisor (R2) | 10 kOhms |
Ganancia de corriente DC (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V / 140 @ 100mA, 2V |
Saturación Vce (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA |
Corriente - Corte del colector (Máx.) | 500nA |
Frecuencia - Transición | 250MHz, 260MHz |
Potencia - max | 150mW |
Tipo de montaje | Surface Mount |
Paquete / Caja | SOT-563, SOT-666 |
Paquete del dispositivo del proveedor | EMT6 |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMD30T2R Peso | Contáctenos |
Número de pieza de repuesto | EMD30T2R-FT |
RN2903,LF
Toshiba Semiconductor and Storage
RN2904(T5L,F,T)
Toshiba Semiconductor and Storage
RN2904,LF
Toshiba Semiconductor and Storage
RN2905,LF(CT
Toshiba Semiconductor and Storage
RN2906(T5L,F,T)
Toshiba Semiconductor and Storage
RN2907(T5L,F,T)
Toshiba Semiconductor and Storage
RN2908(T5L,F,T)
Toshiba Semiconductor and Storage
RN2909(T5L,F,T)
Toshiba Semiconductor and Storage
RN2910(T5L,F,T)
Toshiba Semiconductor and Storage
RN2911(T5L,F,T)
Toshiba Semiconductor and Storage
LFE2-6E-5T144I
Lattice Semiconductor Corporation
M1A3P600-1FG484
Microsemi Corporation
M1AFS250-FG256
Microsemi Corporation
EP4CE75F23C7
Intel
5SEE9H40C4N
Intel
XC4044XL-1HQ208I
Xilinx Inc.
XC4VFX20-10FF672C
Xilinx Inc.
5CGXFC5C6F23I7N
Intel
EP20K160EQC240-2
Intel
EP4SGX230FF35C4N
Intel