casa / productos / Circuitos integrados (ICs) / Memoria / DS1245Y-120IND+
Número de pieza del fabricante | DS1245Y-120IND+ |
---|---|
Número de parte futuro | FT-DS1245Y-120IND+ |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | - |
DS1245Y-120IND+ Estado (ciclo de vida) | En stock |
Estado de la pieza | Active |
Tipo de memoria | Non-Volatile |
Formato de memoria | NVSRAM |
Tecnología | NVSRAM (Non-Volatile SRAM) |
Tamaño de la memoria | 1Mb (128K x 8) |
Frecuencia de reloj | - |
Tiempo de ciclo de escritura - Palabra, Página | 120ns |
Tiempo de acceso | 120ns |
interfaz de memoria | Parallel |
Suministro de voltaje | 4.5V ~ 5.5V |
Temperatura de funcionamiento | -40°C ~ 85°C (TA) |
Tipo de montaje | Through Hole |
Paquete / Caja | 32-DIP Module (0.600", 15.24mm) |
Paquete del dispositivo del proveedor | 32-EDIP |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
DS1245Y-120IND+ Peso | Contáctenos |
Número de pieza de repuesto | DS1245Y-120IND+-FT |
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