casa / productos / Productos semiconductores discretos / Diodos - Zener - Single / BZD27C56P-HE3-08
Número de pieza del fabricante | BZD27C56P-HE3-08 |
---|---|
Número de parte futuro | FT-BZD27C56P-HE3-08 |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | Automotive, AEC-Q101, BZD27C |
BZD27C56P-HE3-08 Estado (ciclo de vida) | En stock |
Estado de la pieza | Active |
Voltaje - Zener (Nom) (Vz) | 56V |
Tolerancia | - |
Potencia - max | 800mW |
Impedancia (Max) (Zzt) | 60 Ohms |
Corriente - Fuga inversa @ Vr | 1µA @ 43V |
Voltaje - Adelante (Vf) (Máx) @ Si | 1.2V @ 200mA |
Temperatura de funcionamiento | -65°C ~ 175°C |
Tipo de montaje | Surface Mount |
Paquete / Caja | DO-219AB |
Paquete del dispositivo del proveedor | DO-219AB (SMF) |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
BZD27C56P-HE3-08 Peso | Contáctenos |
Número de pieza de repuesto | BZD27C56P-HE3-08-FT |
BZD27C15P-M3-18
Vishay Semiconductor Diodes Division
BZD27C160P-E3-18
Vishay Semiconductor Diodes Division
BZD27C160P-HE3-18
Vishay Semiconductor Diodes Division
BZD27C160P-M3-08
Vishay Semiconductor Diodes Division
BZD27C160P-M3-18
Vishay Semiconductor Diodes Division
BZD27C16P-E3-18
Vishay Semiconductor Diodes Division
BZD27C16P-HE3-18
Vishay Semiconductor Diodes Division
BZD27C16P-M3-08
Vishay Semiconductor Diodes Division
BZD27C16P-M3-18
Vishay Semiconductor Diodes Division
BZD27C180P-E3-18
Vishay Semiconductor Diodes Division
LFECP6E-5TN144C
Lattice Semiconductor Corporation
AFS600-2FG484I
Microsemi Corporation
M7AFS600-1FG484
Microsemi Corporation
EP2C50F484C6
Intel
5SGXMA3E2H29I2LN
Intel
5SEEBH40I3N
Intel
XC2V1000-4BGG575C
Xilinx Inc.
A54SX08-2FGG144I
Microsemi Corporation
LFE3-70EA-8FN484C
Lattice Semiconductor Corporation
EP20K100QC240-3
Intel