casa / productos / Productos semiconductores discretos / Transistores - IGBTs - Módulos / BSM100GB120DN2KHOSA1
Número de pieza del fabricante | BSM100GB120DN2KHOSA1 |
---|---|
Número de parte futuro | FT-BSM100GB120DN2KHOSA1 |
SPQ / MOQ | Contáctenos |
Material de empaque | Reel/Tray/Tube/Others |
serie | - |
BSM100GB120DN2KHOSA1 Estado (ciclo de vida) | En stock |
Estado de la pieza | Not For New Designs |
Tipo IGBT | - |
Configuración | Half Bridge |
Voltaje - Desglose del emisor del colector (máx.) | 1200V |
Corriente - Colector (Ic) (Max) | 145A |
Potencia - max | 700W |
Vce (on) (Max) @ Vge, Ic | 3V @ 15V, 100A |
Corriente - Corte del colector (Máx.) | 2mA |
Capacitancia de entrada (Cies) @ Vce | 6.5nF @ 25V |
Entrada | Standard |
Termistor NTC | No |
Temperatura de funcionamiento | 150°C (TJ) |
Tipo de montaje | Chassis Mount |
Paquete / Caja | Module |
Paquete del dispositivo del proveedor | Module |
País de origen | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSM100GB120DN2KHOSA1 Peso | Contáctenos |
Número de pieza de repuesto | BSM100GB120DN2KHOSA1-FT |
APTGT150DA120TG
Microsemi Corporation
APTGT150DA170D1G
Microsemi Corporation
APTGT150DA170G
Microsemi Corporation
APTGT150DA60TG
Microsemi Corporation
APTGT150DU170G
Microsemi Corporation
APTGT150DU60TG
Microsemi Corporation
APTGT150SK120D1G
Microsemi Corporation
APTGT150SK120TG
Microsemi Corporation
APTGT150SK170D1G
Microsemi Corporation
APTGT150SK60TG
Microsemi Corporation
A3P125-TQG144
Microsemi Corporation
M1A3P400-2FG256
Microsemi Corporation
LFE2M70E-6FN1152I
Lattice Semiconductor Corporation
A3PN030-Z2VQG100
Microsemi Corporation
5SGXMA4K1F40C2LN
Intel
5SGXMA4K3F40C2N
Intel
LCMXO640C-3B256I
Lattice Semiconductor Corporation
LFE3-17EA-8FN484I
Lattice Semiconductor Corporation
EPF10K30ABC356-4
Intel
EPF10K20RC208-4N
Intel